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IS62WV20488ALL IS62WV20488BLL
2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
FEATURES
* High-speed access times: 25, 35 ns * High-performance, low-power CMOS process * Multiple center power and ground pins for greater noise immunity * Fully static operation: no clock or refresh required * TTL compatible inputs and outputs * Single power supply - VDD 1.65V to 2.2V (IS62WV20488ALL) speed = 35ns for Vcc = 1.65V to 2.2V - VDD 2.4V to 3.6V (IS62WV20488BLL) speed = 25ns for Vcc = 2.4V to 3.6V * Packages available: - 48-ball miniBGA (9mm x 11mm) - 44-pin TSOP (Type II) * Industrial Temperature Support * Lead-free available
ISSI
DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low
power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
(R)
PRELIMINARY INFORMATION JULY 2006
When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS62WV20488ALL/BLL operates from a single power supply and all inputs are TTL-compatible. The IS62WV20488ALL/BLL is available in 48 ball mini BGA and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A20
DECODER
2M X 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2 CS1 OE WE
Copyright (c) 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL CIRCUIT
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
1
IS62WV20488ALL IS62WV20488BLL
PIN CONFIGURATION
48-pin Mini BGA (M ) (9mm x 11mm)
1 2 3 4 5 6
NC NC A0 A1 A2 A3 A4 CS1 I/O0 I/O1 VDD GND I/O2 I/O3 WE A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
ISSI
44-pin TSOP (Type II )
(R)
A B C D E F G H
NC NC NC GND VDD NC NC A18
OE NC NC NC NC NC A19 A8
A0 A3 A5 A17 NC A14 A12 A9
A1 A4 A6 A7 A16 A15 A13 A10
A2
CS1
CS2 I/O0 I/O2 VDD GND I/O6 I/O7 A20
I/O1 I/O3 I/O4 I/O5 WE A11
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
NC NC A20 A18 A17 A16 A15 OE I/O7 I/O6 GND VDD I/O5 I/O4 A14 A13 A12 A11 A10 A19 NC NC
PIN DESCRIPTIONS
A0-A20 CS1, CS2 OE WE I/O0-I/O7 VDD GND NC Address Inputs Chip Enable Input Output Enable Input Write Enable Input Data Input / Output Power Ground No Connection
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
IS62WV20488ALL IS62WV20488BLL
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CS1 H X L L L CS2 X L H H H OE X X H L X I/O Operation High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ICC ICC ICC
ISSI
(R)
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM VDD TSTG PT Parameter Terminal Voltage with Respect to GND VDD Relates to GND Storage Temperature Power Dissipation Value -0.5 to VDD + 0.5 -0.3 to 4.0 -65 to +150 1.0 Unit V V C W
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol CIN CI/O Parameter Input Capacitance Input/Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25C, f = 1 MHz, VDD = 3.3V.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
3
IS62WV20488ALL IS62WV20488BLL
OPERATING RANGE (VDD) (IS62WV20488ALL)
Range Ambient Temperature Commercial 0C to +70C Industrial -40C to +85C VDD (35 nS) 1.65V-2.2V 1.65V-2.2V
ISSI
(R)
OPERATING RANGE (VDD) (IS62WV20488BLL)(1)
Range Ambient Temperature Commercial 0C to +70C Industrial -40C to +85C VDD (25 nS) 2.4V-3.6V 2.4V-3.6V
Note: 1. When operated in the range of 2.4V-3.6V, the device meets 25ns. When operated in the range of 3.3V + 5%, the device meets 15ns.
4
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
IS62WV20488ALL IS62WV20488BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 2.4V-3.6V
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VDD GND VOUT VDD, Outputs Disabled Test Conditions VDD = Min., IOH = -1.0 mA VDD = Min., IOL = 1.0 mA Min. 1.8 -- 2.0 -0.3 -1 -1
ISSI
Max. -- 0.4 VDD + 0.3 0.8 1 1 Unit V V V V A A
(R)
Note: 1. VIL (min.) = -0.3V DC; VIL (min.) = -2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 1.65V-2.2V
Symbol VOH VOL VIH VIL(1) ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage GND VIN VDD GND VOUT VDD, Outputs Disabled Test Conditions IOH = -0.1 mA IOL = 0.1 mA VDD 1.65-2.2V 1.65-2.2V 1.65-2.2V 1.65-2.2V Min. 1.4 -- 1.4 -0.2 -1 -1 Max. -- 0.2 VDD + 0.2 0.4 1 1 Unit V V V V A A
Note: 1. VIL (min.) = -0.3V DC; VIL (min.) = -2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
5
IS62WV20488ALL IS62WV20488BLL
ISSI
Test Conditions VDD = Max., IOUT = 0 mA, f = fMAX VDD = Max., IOUT = 0 mA, f = 0 Com. Ind. typ.(2) Com. Ind. Min. -- -- 15 -- -- -- -- -- -- 0.8 10 15 10 12 1.5 1.5 -- -- -- -- -- -- 10 15 10 12 1.5 1.5 mA mA -25 Max. 30 35 -35 Min. Max. -- -- 25 30 Unit mA
(R)
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC VDD Dynamic Operating Supply Current Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs)
ICC1 ISB1
VDD = Max., Com. VIN = VIH or VIL Ind. CS1 VIH, f = 0, CS2 = VIL VDD = Max., CS1 VDD - 0.2V, CS2 0.2V, VIN VDD - 0.2V, or VIN 0.2V, f = 0 Com. Ind. typ.(2)
ISB2
mA
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.
6
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
IS62WV20488ALL IS62WV20488BLL
AC TEST CONDITIONS (LOW POWER)
Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (VRef) Output Load Unit (2.4V-3.6V) 0.4V to VDD-0.3V 1.5ns VDD/2 See Figures 1 and 2 Unit (1.65V-2.2V) 0.4V to VDD-0.2V 1.5ns VDD/2 See Figures 1 and 2
ISSI
(R)
AC TEST LOADS
3070 1.8V/3.3V
3070 1.8V/3.3V
OUTPUT 30 pF Including jig and scope 3150
OUTPUT 5 pF Including jig and scope 3150
Figure 1
Figure 2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
7
IS62WV20488ALL IS62WV20488BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CS1/CS2 Access Time OE Access Time OE to High-Z Output OE to Low-Z Output
(2)
ISSI
25ns Min. Max. 25 -- 4 -- -- -- 5 0 10 -- 25 -- 25 12 8 -- 8 -- 35ns Min. Max. 35 -- 4 -- -- -- 5 0 10 -- 35 -- 35 15 10 -- 10 -- Unit ns ns ns ns ns ns ns ns ns
(R)
tRC tAA tOHA tACS1/tACS2 tDOE tHZOE(2) tLZOE(2) tHZCS1/tHZCS2 tLZCS1/tLZCS2
(2)
CS1/CS2 to High-Z Output CS1/CS2 to Low-Z Output
Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to VDD-0.2V/0.4V to VDD-0.3V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = VIL, CS2 = WE = VIH)
tRC
ADDRESS
tAA tOHA tOHA
DATA VALID
DOUT
PREVIOUS DATA VALID
8
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
IS62WV20488ALL IS62WV20488BLL
AC WAVEFORMS READ CYCLE NO. 2(1,3) (CS1, CS2, OE Controlled)
tRC
ISSI
(R)
ADDRESS
tAA tOHA
OE
tDOE tHZOE
CS1
tACS1/tACS2
tLZOE
CS2
tLZCS1/ tLZCS2
HIGH-Z
tHZCS
DATA VALID
DOUT
Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1= VIL. CS2=WE=VIH. 3. Address is valid prior to or coincident with CS1 LOW and CS2 HIGH transition.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
9
IS62WV20488ALL IS62WV20488BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
Symbol Parameter Write Cycle Time 25 ns Min. Max. 25 18 15 0 0 18 12 0 -- 5 -- -- -- -- -- -- -- -- 12 -- 35 ns Min. Max. 35 25 25 0 0 30 15 0 -- 5 -- -- -- -- -- -- -- -- 20 -- Unit ns ns ns ns ns ns ns ns ns ns
ISSI
(R)
tWC
tSCS1/tSCS2 CS1/CS2 to Write End tAW Address Setup Time to Write End tHA tSA tPWE(4) tSD tHD tHZWE(3) tLZWE
Notes:
(3)
Address Hold from Write End Address Setup Time WE Pulse Width Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output WE HIGH to Low-Z Output
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to VDD-0.2V/0.4V to VDD-0.3V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 3. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 4. tPWE > tHZWE + tSD when OE is LOW.
AC WAVEFORMS WRITE CYCLE NO. 1 (CS1/CS2 Controlled, OE = HIGH or LOW)
tWC
ADDRESS
tSCS1 tHA
CS1
tSCS2
CS2
tAW tPWE tSA tHZWE
HIGH-Z
WE
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
10
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
IS62WV20488ALL IS62WV20488BLL
AC WAVEFORMS WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
tWC
ISSI
(R)
ADDRESS
OE
tSCS1 tHA
CS1
tSCS2
CS2
tAW tPWE tSA tHZWE
HIGH-Z
WE
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
tWC
ADDRESS
OE
tSCS1 tHA
CS1
tSCS2
CS2
tAW tPWE tSA tHZWE
HIGH-Z
WE
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
11
IS62WV20488ALL IS62WV20488BLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol VDR IDR tSDR tRDR Parameter Vcc for Data Retention Data Retention Current Data Retention Setup Time Recovery Time Test Condition See Data Retention Waveform Vcc = 1.2V, CS1/CS2 Vcc - 0.2V See Data Retention Waveform See Data Retention Waveform Min. 1.2 -- 0 tRC 0.5
ISSI
Typ.(1) Max. 3.6 1.5 -- -- Unit V mA ns ns
(R)
Note: 1. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.
CS1 DATA RETENTION WAVEFORM (CS1 Controlled)
tSDR VCC Data Retention Mode tRDR
3.0V
2.2V
VDR CS1 VCC
CS1 GND
- 0.2V
DATA RETENTION WAVEFORM (CS2 Controlled)
Data Retention Mode VCC tSDR tRDR
3.0
CS2 2.2V VDR 0.4V GND
CS2 0.2V
12
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
IS62WV20488ALL IS62WV20488BLL
ORDERING INFORMATION Industrial Range: -40C to +85C Voltage Range: 2.4V to 3.6V
Speed (ns) 25 Order Part No. IS62WV20488BLL-25MI IS62WV20488BLL-25MLI IS62WV20488BLL-25TI IS62WV20488BLL-25TLI Package 48 mini BGA (9mm x 11mm) 48 mini BGA (9mm x 11mm), Lead-free TSOP (Type II) TSOP (Type II), Lead-free
ISSI
(R)
Industrial Range: -40C to +85C Voltage Range: 1.65V to 2.2V
Speed (ns) 35 Order Part No. IS62WV20488ALL-35MI IS62WV20488ALL-35TI Package 48 mini BGA (9mm x 11mm) TSOP (Type II)
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 06/21/06
13
PACKAGING INFORMATION
Mini Ball Grid Array Package Code: M (48-pin)
ISSI
Bottom View
b (48x)
(R)
Top View 1 2 3 4 56 6
5
4
3
2
1
A B C D D E F G H D1
e
A B C D E F G H
e E E1
A2 SEATING PLANE A1
A
Notes: 1. Controlling dimensions are in millimeters.
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. D 01/15/03
PACKAGING INFORMATION
Mini Ball Grid Array Package Code: M (48-pin)
ISSI
(R)
mBGA - 6mm x 8mm
MILLIMETERS Sym.
N0. Leads A A1 A2 D D1 E E1 e b -- 0.25 0.60
INCHES Min. Typ. Max.
Min. Typ. Max.
48 -- -- -- 5.60BSC 5.90 6.00 6.10 4.00BSC 0.80BSC 0.40 0.45 0.50 1.20 0.40 --
.-- 0.010 0.024
-- 0.047 -- 0.016 -- --
7.90 8.00 8.10
0.311 0.314 0.319 0.220BSC 0.232 0.236 0.240 0.157BSC 0.031BSC 0.016 0.018 0.020
mBGA - 7.2mm x 8.7mm
MILLIMETERS Sym.
N0. Leads A A1 A2 D D1 E E1 e b -- 0 .24 0.60
mBGA - 9mm x 11mm
INCHES Min. Typ. Max. Sym.
N0. Leads
MILLIMETERS Min. Typ. Max.
48 -- 0.24 0.60 -- -- -- 5.25BSC 8.90 9.00 9.10 3.75BSC 0.75BSC 0.30 0.35 0.40 1.20 0.30 -- --
INCHES Min. Typ. Max.
Min. Typ. Max.
48 -- -- -- 5.25BSC 7.10 7.20 7.30 3.75BSC 0.75BSC 0.30 0.35 0.40 1.20 0.30 --
-- 0.009 0.024
-- -- --
0.047 0.012 --
A A1 A2 D D1 E E1 e b
-- -- --
0.047 0.012 --
0.009 0.024
8.60 8.70 8.80
0.339 0.343 0.346 0.207BSC 0.280 0.283 0.287 0.148BSC 0.030BSC 0.012 0.014 0.016
10.90 11.00 11.10
0.429 0.433 0.437 0.207BSC 0.350 0.354 0.358 0.148BSC 0.030BSC 0.012 0.014 0.016
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. D 01/15/03
PACKAGING INFORMATION
Plastic TSOP Package Code: T (Type II)
ISSI
Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
(R)
N
N/2+1
E1
E
1 D
N/2
SEATING PLANE
ZD
A
.
e b L A1 C
Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD
Millimeters Min Max
Inches Min Max
Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 -- 1.20 -- 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0 5 0 5
Millimeters Min Max 50 -- 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0 5
Inches Min Max
(N) 32 -- 1.20 -- 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0 5 0 5
-- 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0 5
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. F 06/18/03

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